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There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC’s from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10⁻⁵K⁻¹for silicon nitride and (5.67 ± 0.53) · 10⁻⁶K⁻¹for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments.

 

Bragg-grating based cavities and coupler designs present opportunities for flexible allocation of bandwidth and spectrum in silicon photonic devices. Integrated silicon photonic devices are moving toward mainstream, mass adoption, leading to the need for compact Bragg grating based designs. In this work we present a design and experimental validation of a cascaded contra-directional Bragg-grating coupler with a measured main lobe to side-lobe contrast of 12.93 dB. This level of performance is achieved in a more compact size as compared to conventional apodized gratings, and a similar design philosophy can be used to improve side-lobe reduction in grating-based mirror design for on-chip lasers and other cavity-based designs as well. 

In this paper, we experimentally demonstrate a broadband Archimedes spiral delay line with high packing density on a silicon photonic platform. This high density is achieved by optimizing the gap between the adjacent waveguides (down to sub-micron scale) in the spiral configuration. However, care must be taken to avoid evanescent coupling, the presence of which will cause the spiral to behave as a novel type of distributed spiral resonator. To this end, an analytical model of the resonance phenomenon was developed for a simple spiral. Moreover, it is demonstrated that this distributed spiral resonator effect can be minimized by ensuring that adjacent waveguides in the spiral configuration have different propagation constants ( β ). Experimental validations were accomplished by fabricating and testing multiple spiral waveguides with varying lengths (i.e., 0.4, 0.8, and 1.4 mm) and separation gaps (i.e., 300 and 150 nm). Finally, a Linear Density Figure of Merit (LDFM) is introduced to evaluate the packing efficiency of various spiral designs in the literature. In this work, the optimum experimental design with mitigated resonance had a length of 1.4mm and occupied an area of 60 × 60µm, corresponding to an LDFM of 388km -1 . 

3D imaging is essential for the study and analysis of a wide variety of structures in numerous applications. Coherent photonic systems such as optical coherence tomography (OCT) and light detection and ranging (LiDAR) are state-of-the-art approaches, and their current implementation can operate in regimes that range from under a few millimeters to over more than a kilometer. We introduce a general method, which we call universal photonics tomography (UPT), for analyzing coherent tomography systems, in which conventional methods such as OCT and LiDAR may be viewed as special cases. We demonstrate a novel approach (to our knowledge) based on the use of phase modulation combined with multirate signal processing to collect positional information of objects beyond the Nyquist limits. 

We introduce and experimentally demonstrate a miniaturized integrated spectrometer operating over a broad bandwidth in the short-wavelength infrared (SWIR) spectrum that combines an add-drop ring resonator narrow band filter with a distributed Bragg reflector (DBR) based broadband filter realized in a silicon photonic platform. The contra-directional coupling DBR filter in this design consists of a pair of waveguide sidewall gratings that act as a broadband filter (i.e., 3.9 nm). The re-directed beam is then fed into the ring resonator which functions as a narrowband filter (i.e., 0.121 nm). In this scheme the free spectral range (FSR) limitation of the ring resonator is overcome by using the DBR as a filter to isolate a single ring resonance line. The overall design of the spectrometer is further simplified by simultaneously tuning both components through the thermo-optic effect. Moreover, several ring-grating spectrometer cells with different central wavelengths can be stacked in cascade in order to cover a broader spectrum bandwidth. This can be done by centering each unit cell on a different center wavelength such that the maximum range of one-unit cell corresponds to the minimum range of the next unit cell. This configuration enables high spectral resolution over a large spectral bandwidth and high extinction ratio (ER), making it suitable for a wide variety of applications.

 

We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of ∼−18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.

 

We present an experimental demonstration of notch filters with arbitrary center wavelengths capable of tunable analog output power values varying between full extinction of 15 and 0 dB. Each filter is composed of highly modular apodized four-port Bragg add/drop filters to reduce the crosstalk between concatenated devices. The constructed photonic integrated circuit experimentally demonstrates spectra shaping using four independent notch filters. Each notch filter supports a bandwidth of$\sim 2\mathrm{nm}$and is shown to be suitable for realization of programmable photonic integrated circuits.

 

We report an advanced Fourier transform spectrometer (FTS) on silicon with significant improvement compared with our previous demonstration in [Nat. Commun.9,665(2018)2041-1723]. We retrieve a broadband spectrum (7 THz around 193 THz) with 0.11 THz or sub nm resolution, more than 3 times higher than previously demonstrated [Nat. Commun.9,665(2018)2041-1723]. Moreover, it effectively solves the issue of fabrication variation in waveguide width, which is a common issue in silicon photonics. The structure is a balanced Mach–Zehnder interferometer with 10 cm long serpentine waveguides. Quasi-continuous optical path difference between the two arms is induced by changing the effective index of one arm using an integrated heater. The serpentine arms utilize wide multi-mode waveguides at the straight sections to reduce propagation loss and narrow single-mode waveguides at the bending sections to keep the footprint compact and avoid modal crosstalk. The reduction of propagation loss leads to higher spectral efficiency, larger dynamic range, and better signal-to-noise ratio. Also, for the first time to our knowledge, we perform a thorough systematic analysis on how the fabrication variation on the waveguide widths can affect its performance. Additionally, we demonstrate that using wide waveguides efficiently leads to a fabrication-tolerant device. This work could further pave the way towards a mature silicon-based FTS operating with both broad bandwidth (over 60 nm) and high resolution suitable for integration with various mobile platforms.